inchange semiconductor isc product specification isc silicon npn power transistor 2SC4434 description collector-emitter breakdown voltage- : v (br)ceo = 400v(min) high switching speed applications designed for switching regulator, lighting inverter, and general purpose applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 500 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 10 v i c collector current-continuous 15 a i cm collector current-peak 30 a i b base current-continuous 5 a p c collector power dissipation @t c =25 120 w t j junction temperature 150 t stg storage temperature -55~150 isc website www.iscsemi.cn
inchange semiconductor isc product specification isc silicon npn power transistor 2SC4434 electrical characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 25ma; i b = 0 400 v v ce (sat) collector-emitter saturation voltage i c = 8a; i b = 1.6a b 0.7 v v be (sat) base-emitter saturation voltage i c = 8a; i b = 1.6a b 1.3 v i cbo collector cutoff current v cb = 500v; i e = 0 100 a i ebo emitter cutoff current v eb = 10v; i c = 0 100 a h fe dc current gain i c = 8a; v ce = 4v 10 25 c ob output capacitance i e = 0; v cb = 10v; f= 1mhz 135 pf f t current-gain?bandwidth product i e = -1.5a; v ce = 12v 10 mhz switching times t on turn-on time 0.5 s t stg storage time 2.0 s t f fall time i c = 8a; i b1 = 1.6a; i b2 = -3.2a; v cc = 200v; r l = 25 0.15 s isc website www.iscsemi.cn 2
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